wpm 3401 p-channel enhancement mode mosfet order information wpm 3401 - 3 /tr s ot23 -3 3000 tape&reel description the wpm 3401 is the p-channel logic enhancement mode power field effect transistors are produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. features z -30v/- 4.3 a,rds(on) 53m ? @vgs= -10v z -30v/- 3.4 a,rds(on) 56m ? @vgs=-4.5v z super high density cell design for extremely low rds (on) z exceptional on-resistance and maximum dc current capability z so t23 -3 package design application z power management in note book z portable equipment z battery powered system z dc/dc converter z load switch = date code = specific device code wp 1u u wp 1 p?channel mosfet g s d top view 2 3 1 1 2 3 gate source drain package part number shipping < < product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
absolute maximum ratings v ds drain-source voltage -30 v v gs gate-source voltage 12 v i d continuous drain current steady-state ta=25 - 4.6 a steady-state ta=70 - 3.6 i dm pulse drain current -2 0 a p d power dissipation ta=25 1.3 w ta=70 0.8 t j operating junction temperature range -55~150 tstg storage temperature range r ja /w electrical characteristics (t a =25 unles : s otherwise noted) static drain-source breakdown voltage v (br)dss v gs =0v,i d =-250ua -30 gate threshold voltage v gs(th) v ds =v gs ,i d =-250ua -1.5 v gate leakage current i gss v ds =0v,v gs = 12 v 100 na v ds =-24v,v gs =0v -1 zero gate voltage drain current i dss v ds =-24v,v gs =0v t j =85 : -5 ua d(on) v ds = -5v,v gs =-4.5v -10 a v gs =-10v,i d =-4.3a drain-source on-resistance r ds(on) v gs =-4.5v,i d =-3.5a 0.056 forward transconductance gfs v ds =-15v,i d =-4.3a diode forward voltage v sd i s = -1.0a,v gs =0v -0.5 -1.0 dynamic total gate charge q g 27 gate-source charge q gs 1.7 gate-drain charge q gd v ds =-15v,v gs =-10v i d = -4.3a 5 nc input capacitance c iss 1250 output capacitance c oss 106 reverse transfer capacitance c rss v ds =-15v,v gs =0v f=1mhz 90 pf t d(on) 10 turn-on time t r t d(off) turn-off time t f v dd =-15v,r l =15 i d a -1.0a,v gen =-10v r g =6 ns parameter (ta=25 unless otherwise specified) : ! parameter parameter symbol conditions min. typ max. unit value l parameter unit symbol 0.053 0.038 0.043 13 s -0.75 -1.5 v on state drain current (pulse) i thermal resistance-junction ambient to 95 18 60 9 wpm 3401 product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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